报告题目：界面物理过程对有机小分子太阳能电池I-V曲线的影响
Influence of interface physical processes on I-V curve of small organic molecules solar cell

时 间：2015年5月22日 16:00-18:00
地 点：武汉光电国家实验室A101
报 告 人：侯晓远 教 授，复旦大学
邀 请 人：胡 斌 教 授

报告人简介：
侯晓远，男，1959年生。复旦大学学士（1982）、理学博士（1987）。1987年毕业后留校任讲师，1991年升任副教授，1993年晋升为教授、博士生导师。1988年和1993年曾两次获德国洪堡研究奖学金作为访问学者赴德国杜依斯堡大学固体物理实验室进行合作研究。2000-2005年任教育部“长江学者”特聘教授。现任教育部科技委委员（信息学部）。曾任中国物理学会常务理事（2003-2011），复旦大学应用表面物理国家重点实验室主任（1998-2005）、中国物理学会表面与界面委员会主任（2003-2009）。曾获“国家杰出青年科学基金”（1995）、求是科技基金会“杰出青年学者”奖（1996）、上海市自然科学牡丹奖（1996）、中国物理学会叶企孙物理奖（1997）、上海市科学技术进步一等奖（2003）、上海市模范教师（2009）。

Biography:
Xiao Yuan HOU (born 1959) is a professor in the Department of Physics at Fudan University, China. He obtained his Ph.D. degree (1987) in Physics at the Fudan University. He was a Visiting Scholar as the Humboldt Research Scholarship Fellow in the Solid State Physics Laboratory at Duisburg University, Germany in 1988 and 1993 again. During the summers in 1996, 1998 and 1999, he visited the City University of Hong Kong as a Visiting Professor. He served as the Chair Professor of “Cheung Kong Scholars” from 2001 to 2005 and as the Director of the Surface Physics Laboratory (national key lab) at Fudan University from 1998 to 2005. He was the executive member of the Chinese Physical Society (2003-2011)，the director of Committee on Surface and Interface Physics. He won "the national outstanding youth science fund" (1995), the award of "outstanding young scholars" of Qiushi Science and Technologies Foundation (1996), Shanghai natural science MuDan Award(1996) and Ye Qisun prize for physics, Chinese Physical Society (1997), Shanghai science and technology progress award (2003), Shanghai model teacher (2009).

报告摘要：
I-V曲线是最基本也是最重要的表征太阳能电池性能的方法。而在有机小分子器件中，各个界面的物理过程发挥至关重要的作用。因此，我们着重研究界面物理过程对于I-V曲线的影响。
在实验中证实了S形I-V曲线来自于ITO/有机界面的衰减，并且提出了一个改良的器件等效电路模型。进一步的，在ITO/有机界面处插入MoOx层会显著的抑制界面势垒的产生，避免了S形I-V曲线的出现，从而极大的延长了器件的寿命。还发现给体材料 CuPc与受体材料C60中激子产生的光电流对负向偏压的响应完全不同，通过实验提出了在C60 层中三态激子-电子相互作用是导致这个现象的主要物理机制。

Abstract:
I-V curve is the most important method to describe solar cells. Physical processes at the interfaces play a key role in small organic molecules devices. Therefore we focus on the influence of interfacial processes on the I-V curve.
It has been confirmed that the degradation of ITO/organic interface is the main reason for the appearance of S-shape I-V curve. An improved equivalent circuit model has been proposed. Insertion of MoOx layer can avoid the appearance of the S-shape I-V curve and thereby greatly extend the lifetime of the device. The dependence of the photocurrent originating from the excitons in the CuPc or C60 layer is quite different. It has been suggested that the triplet exciton-electron interaction in C60 layer is the main reason of this phenomenon.

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