沈波，男，1963年7月生，江苏扬州市人，北京大学物理学院教授，博士生导师、长江学者、国家杰出青年基金获得者、国家973计划项目首席科学家、国家863计划“半导体照明”重点专项总体专家组成员。1985年毕业于南京大学物理系，获学士学位，1988年毕业于中国科技大学物理系，获硕士学位，1995年毕业于日本东北大学材料科学研究所(IMR)，获博士学位。曾任日本东京大学产业技术研究所(IIS)客座研究员，东京大学先端科技研究中心(RCAST)、千叶大学电子学与光子学研究中心客座教授，日本产业技术综合研究所(AIST) JSPS访问教授。先后主持和作为核心成员参加国家973计划项目，国家863计划项目，国家自然科学基金重大、重点项目，教育部、北京市重点项目，以及军口项目等20多项科研课题，发表SCI收录论文160多篇，论文被引用超过1400次，先后在国际学术会议上做邀请报告10多次，获国际学术会议“最佳论文奖”2次和全国学术会议“优秀论文奖”4次，获得/申请国家发明专利18件，多次担任国际学术会议程序委员会、组织委员会委员和分会主席，担任国内多个国家重点实验室、科学院重点实验室和国防重点实验室的学术委员会委员，先后获国家自然科学二等奖、江苏省科技进步一等奖和教育部科技进步一等奖。

Bo Shen, born in 7, 1963，Yangzhou city, Jiangsu province. He is a professor in School of Physics of Peking University, who is also a Changjiang Scholar, the winner of national outstanding youth fund, chief scientist of the national 973 program, and the member of expert group of national 863 high basic program “semiconductor lighting”. He graduated in department of physics of Nanjing University with the bachelor degree in 1985, and then graduated in department of physics of University of Science and Technology of China with master degree, finally gained the PhD from the institute of material research of Northeastern University in Japan. He was a guest scientist in institute of industrial technology in Tokyo University, a visiting professor in research center of advanced science and technology in Tokyo University, a visiting professor in research center of electronics and photonics in Chiba University, and then a visiting professor in national institute of advanced industrial science and technology in Japan. As a chair or key member, he has carried out more than 20 scientific research programs, including the national 973 program, national 863 program, major program of national natural science fund, major program of department of education or Beijing city, and programs from army. He has published more than 160 SCI papers with more than 1400 citations, and been an invited speaker in international meetings for more than 10 times with two international “best paper award” and four “outstanding paper award”. He has gained or applied more than 18 national patens for invention, and been a member or session chair of program committee or organizing committee in many international meetings. He is also a member of academic boards of many institutes including national key laboratory, key laboratory of CAS, and key laboratory of national defense. He has gained the second prize of national natural science award, the first prize of science progress award in Jiangsu province, and the first prize of science progress award of department of education.

III族氮化物（又称GaN基）宽禁带半导体属于新兴的第三代半导体体系，在短波长光电子器件和功率电子器件领域具有重大应用价值。过去10多年，以蓝光和白光LED为核心的半导体照明技术和产业飞速发展，形成了对国家经济和人民生活产生显著影响的高技术产业。近年来GaN基功率电子器件受到了学术界和产业界的高度重视，形成了新的研发和产业化热点。本报告将首先介绍半导体照明技术和产业的发展历程和现状，分析当前GaN基LED芯片技术面临的关键科学和技术问题；然后重点介绍GaN基微波功率器件和电力电子器件的发展历程和动态，包括微波功率器件已经取得的突破性进展和产业化现状，电力电子器件相对Si和SiC同类器件的优势和劣势，并对GaN基功率电子器件当前面临的关键科学和技术挑战进行较详细的分析。

III-nitrides (also known as the GaN-based) wide band gap semiconductors, belonging to the emerging third-generation semiconductor system, have promising applications in the fields of short wavelength optoelectronic devices and power electronics. Over the last decade, the rapid development of the semiconductor lighting technology and industry, focusing on the blue and white LEDs, formed high technology industry which has significant impact on the national economy and peoples lives. Recently, GaN-based power electronic devices have been attached great attentions to academia and industry, which are the new hot spots of R&D and industrialization. This report will first introduce the history and status of the development of semiconductor lighting technology and industry, and analyze the key scientific and technical issues of current GaN-based LED chip technology. Then this report will focus on the histories and dynamics of GaN-based microwave power devices and power electronic devices, including the breakthroughs and the industrialization status achieved by microwave power devices, strengths and weaknesses of power electronics compared to Si and SiC competing devices. At last, a more detailed analysis will be made on the key scientific and technological challenges of GaN-based power electronic devices.